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Interactions At Metal/Oxide And Oxide/Oxide Interfaces Studied By Ultrathin Film Growth On Single-Crystal Oxide Substrates

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  • ROBERT J. LAD

    (Laboratory for Surface Science and Technology and Department of Physics and Astronomy, University of Maine, Orono, ME 04469–5764, USA)

Abstract

This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometricNiO(100),TiO2(110), and$\alpha - {\rm Al}_2 {\rm O}_3 (10\bar{1} 2)$surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.

Suggested Citation

  • Robert J. Lad, 1995. "Interactions At Metal/Oxide And Oxide/Oxide Interfaces Studied By Ultrathin Film Growth On Single-Crystal Oxide Substrates," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 2(01), pages 109-126.
    • Handle: RePEc:wsi:srlxxx:v:02:y:1995:i:01:n:s0218625x9500011x
    DOI: 10.1142/S0218625X9500011X
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