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GROWTH OFGeONIn-ADSORBEDSi(111)SURFACES STUDIED BY UHV-REM

Author

Listed:
  • H. MINODA

    (Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan)

  • Y. TANISHIRO

    (Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan)

  • N. YAMAMOTO

    (Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan)

  • K. YAGI

    (Physics Department, Tokyo Institute of Technology, Oh-okayama, Meguro, Tokyo 152, Japan)

Abstract

Growth ofGeon In-adsorbedSi(111)$\sqrt{3}\times \sqrt{3}$and4×1surfaces was studied by REM-RHEED. Indium atoms were segregated to the topmost surface duringGedeposition. The formation of the1×1structure, which is one of the In-adsorbed structures on theGe(111)surface, was observed on both the$\sqrt{3}\times \sqrt{3}$structure and the4×1surface structures. Suppression of two- and three-dimensional island nucleation of Ge by In predeposition was noticed below 430°C on both surface structures. The critical thickness at which the layer growth mode changed to the island growth mode on the4×1surface structure was larger than that on the$\sqrt{3}\times \sqrt{3}$surface structure. Apparent surface diffusion lengths ofGechanged after 2 ML deposition ofGeon the$\sqrt{3}\times \sqrt{3}$surface structure.

Suggested Citation

  • H. Minoda & Y. Tanishiro & N. Yamamoto & K. Yagi, 1995. "GROWTH OFGeONIn-ADSORBEDSi(111)SURFACES STUDIED BY UHV-REM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 2(01), pages 1-8.
    • Handle: RePEc:wsi:srlxxx:v:02:y:1995:i:01:n:s0218625x95000029
    DOI: 10.1142/S0218625X95000029
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