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ELECTRONIC BAND STRUCTURES OFInAs(110)ANDInAs(110)Bi(1 ML)

Author

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  • A. UMERSKI

    (Physics Department, University of Exeter, Stocker Road, Exeter EX4 4QL, UK)

  • G.P. SRIVASTAVA

    (Physics Department, University of Exeter, Stocker Road, Exeter EX4 4QL, UK)

Abstract

We use a supercell technique with local density functional pseudopotential theory to calculate the self-consistent electronic band structures ofInAs(110)with zero and one ordered monolayer coverage of Bi within the Goddard geometry. These systems have recently been the subject of experimental investigations by the McLean group, using angle-resolved photoemission spectroscopy. We are able to analyse the overlayer-induced states in terms of their energies, dispersions, and wave function characters, and our results are compared with the experimentally deduced observations. In addition we contrast our results for these materials with our earlier theoretical investigations ofInAs(110)andInP(110)substrates with Bi overlayers. We are therefore able to confirm the experimental observation that theInAs(110)Bi(1 ML)has a relatively flat absorbate induced highest occupied state [in comparison to the GaAs(110)Bi(1 ML) system].

Suggested Citation

  • A. Umerski & G.P. Srivastava, 1994. "ELECTRONIC BAND STRUCTURES OFInAs(110)ANDInAs(110)Bi(1 ML)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(04), pages 681-684.
    • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x9400093x
    DOI: 10.1142/S0218625X9400093X
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