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STRUCTURAL AND ELECTRICAL STABILITY OF METAL CONTACTS TO MBE GROWN CdTeLAYERS

Author

Listed:
  • P. DEVINE

    (Department of Applied Physics, University of Hull, Hull HU6 7RX, UK)

  • G.W. MATTHEWS

    (Department of Applied Physics, University of Hull, Hull HU6 7RX, UK)

  • D. SANDS

    (Department of Applied Physics, University of Hull, Hull HU6 7RX, UK)

  • C.G. SCOTT

    (Department of Applied Physics, University of Hull, Hull HU6 7RX, UK)

  • M. YOUSAF

    (Department of Applied Physics, University of Hull, Hull HU6 7RX, UK)

  • C.J. BLOMFIELD

    (Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK)

  • I.M. DHARMADASA

    (Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK)

  • G.C. GREGORY

    (Applied Physics Division, Sheffield Hallam University, Sheffield S1 1WB, UK)

Abstract

The properties of ohmic and rectifying contacts to CdTe epilayers have been studied with a view to establishing a contacting technology with sufficient reliability and stability for use in the fabrication of a variety of CdTe-based devices involving single and multilayer structures grown by MBE. In the case ofn-type CdTe layers, evaporated gold has been found to yield Schottky barriers with initial height in excess of 0.9 eV but re-examination after a period of a few weeks at room temperature (or a much shorter time at elevated temperatures) has revealed a significant decline in the barrier height. Associated changes in the electrical properties of the semiconductor layers in the vicinity of the contact interface have been explored usingC-Vdepth profiling measurements and these have been correlated with changes in the chemical structure observed by means of SIMS imaging techniques. In particular, a significant reduction in the uncompensated shallow donor density just below the metal-semiconductor interface has been found to be accompanied by an out diffusion of Te and Cd to the surface of the metal contact.

Suggested Citation

  • P. Devine & G.W. Matthews & D. Sands & C.G. Scott & M. Yousaf & C.J. Blomfield & I.M. Dharmadasa & G.C. Gregory, 1994. "STRUCTURAL AND ELECTRICAL STABILITY OF METAL CONTACTS TO MBE GROWN CdTeLAYERS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(04), pages 669-672.
    • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000904
    DOI: 10.1142/S0218625X94000904
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