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COMBINED USE OF QUANTITATIVE LEED AND STM ONCu(100)-c(2×2)NSURFACES

Author

Listed:
  • S.S. DHESI

    (Surface Science Research Centre, University of Liverpool, P.O. Box 147, Liverpool L69 3BX, UK)

  • S.D. BARRETT

    (Surface Science Research Centre, University of Liverpool, P.O. Box 147, Liverpool L69 3BX, UK)

  • A.W. ROBINSON

    (Surface Science Research Centre, University of Liverpool, P.O. Box 147, Liverpool L69 3BX, UK)

  • F.M. LEIBSLE

    (Surface Science Research Centre, University of Liverpool, P.O. Box 147, Liverpool L69 3BX, UK)

Abstract

Quantitative low-energy electron diffraction (LEED) has been used in conjunction with Scanning Tunneling Microscopy (STM) to demonstrate that these two techniques are complementary and that quantitative LEED can be used in surface analysis without the need for computationally intensive theoretical calculations. We present LEED intensity-voltage (I-V) curves fromCu(100)-c(2×2)Nsurfaces and make qualitative comparisons with quantitative LEED data that exists in the literature. The implications of these comparisons are discussed with respect to other studies of this system.

Suggested Citation

  • S.S. Dhesi & S.D. Barrett & A.W. Robinson & F.M. Leibsle, 1994. "COMBINED USE OF QUANTITATIVE LEED AND STM ONCu(100)-c(2×2)NSURFACES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(04), pages 625-629.
    • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000813
    DOI: 10.1142/S0218625X94000813
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