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AN STM STUDY OF THE(2×4)ANDc(4×4)RECONSTRUCTIONS FORMED ON GaAs(001) BY MOLECULAR BEAM EPITAXY

Author

Listed:
  • A.R. AVERY

    (Department of Chemistry and IRC for Semiconductor Materials, Imperial College, London, SW7 2AY, UK)

  • D.M. HOLMES

    (Department of Chemistry and IRC for Semiconductor Materials, Imperial College, London, SW7 2AY, UK)

  • T.S. JONES

    (Department of Chemistry and IRC for Semiconductor Materials, Imperial College, London, SW7 2AY, UK)

  • B.A. JOYCE

    (IRC for Semiconductor Materials, Imperial College, London, SW7 2AB, UK)

Abstract

Atomic resolution scanning tunneling microscopy (STM) has been used to study the Asterminated(2×4)andc(4×4)reconstructions formed on GaAs(001) surfaces grown in situ by molecular beam epitaxy (MBE). Filled states STM images of the(2×4)surface always showed unit cells consisting of two As dimers in the top layer. Cooling this surface under an As flux led initially to a highly kinked(2×4)phase before the transition to thec(4×4)structure. At no point were three As dimers observed in the top layer for the(2×4)unit cell. Thec(4×4)structure involves the chemisorption of a second layer of As onto an already As-terminated surface. STM images of this surface showed a series of bright rectangular blocks consisting, when complete, of three pairs of As atoms.

Suggested Citation

  • A.R. Avery & D.M. Holmes & T.S. Jones & B.A. Joyce, 1994. "AN STM STUDY OF THE(2×4)ANDc(4×4)RECONSTRUCTIONS FORMED ON GaAs(001) BY MOLECULAR BEAM EPITAXY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(04), pages 621-624.
    • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000801
    DOI: 10.1142/S0218625X94000801
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