IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v01y1994i04ns0218625x94000746.html
   My bibliography  Save this article

THE DYNAMICS OF DEUTERIUM ADSORPTION ON Pt{100} AND THE ROLE OF ADSORBATE-INDUCED DEFECTS

Author

Listed:
  • ST. J. DIXON-WARREN

    (Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK)

  • A.T. PASTEUR

    (Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK)

  • D.A. KING

    (Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK)

Abstract

The dissociative initial sticking probability,s0, for deuterium on Pt{100}-hex has been measured as a function of beam kinetic energy,Ek, and substrate temperature,TS. AtTS=150 K, s was found to increase with increasingEkconsistent with direct activated adsorption; the increase is approximately linear. AtEk=0.063eV,s0is independent of substrate temperature(s0≈0.07)over the range 150 to 1000 K, also consistent with a direct adsorption process. We present evidence for an increase ofs0due to adsorbate-induced defects. These defects survive annealing to 500 K but do not survive annealing to 1030 K. We have also measured s forD2on the(1×1)bulk truncated surface, and find it to be similar to that for the hex-reconstructed phase.

Suggested Citation

  • St. J. Dixon-Warren & A.T. Pasteur & D.A. King, 1994. "THE DYNAMICS OF DEUTERIUM ADSORPTION ON Pt{100} AND THE ROLE OF ADSORBATE-INDUCED DEFECTS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(04), pages 593-596.
    • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000746
    DOI: 10.1142/S0218625X94000746
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X94000746
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X94000746?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000746. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.