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ORDERED AND DISORDERED Sb-RICHInSb(100)SURFACES STUDIED BY STM

Author

Listed:
  • T.S. JONES

    (Department of Chemistry and IRC for Semiconductor Materials, Imperial College, South Kensington, London SW7 2AY, UK)

  • C.F. McCONVILLE

    (Department of Physics, University of Warwick, Coventry CV4 7AL, UK)

  • F.M. LEIBSLE

    (IRC for Surface Science, University of Liverpool, Liverpool L69 3BX, UK)

  • N.V. RICHARDSON

    (IRC for Surface Science, University of Liverpool, Liverpool L69 3BX, UK)

Abstract

Atomic resolution scanning tunneling microscopy (STM) has been used to study the asymmetric-(1×3)andc(4×4)Sb-terminated reconstructions of InSb(100). STM images show that these are examples of ordered and disordered reconstructions respectively. Thec(4×4)structure involves the chemisorption of excess Sb onto an already Sb-terminated surface with the resultant formation of Sb-Sb bonds in the surface layer. The(1×3)structure, however, consists of short chains of individual Sb atoms in the top surface layer. Thec(4×4)structure can be converted into the A-(1×3)by annealing to 500 K with the subsequent loss of Sb.

Suggested Citation

  • T.S. JONES & C.F. McCONVILLE & F.M. LEIBSLE & N.V. RICHARDSON, 1994. "ORDERED AND DISORDERED Sb-RICHInSb(100)SURFACES STUDIED BY STM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(04), pages 513-516.
    • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000552
    DOI: 10.1142/S0218625X94000552
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