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HOMOEPITAXIAL GROWTH ON Cu(111) PROBED BY HELIUM ATOM SCATTERING

Author

Listed:
  • P.C. DASTOOR

    (Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK)

  • J. ELLIS

    (Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK)

  • A. REICHMUTH

    (Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK)

  • H. BULLMAN

    (Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK)

  • B. HOLST

    (Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK)

  • W. ALLISON

    (Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK)

Abstract

The homoepitaxial growth of Cu(111) has been investigated using specular helium atom scattering. Between 400 and 110 K the growth mode gradually changes from step flow at the higher temperatures to multilayer formation at low temperatures. Layerwise growth is not observed for any of the evaporation rates or substrate temperatures investigated, indicating a low diffusion rate across step edges. By lightly sputtering the surface, the density of growth nuclei and hence of step edges can be increased and a more layerwise growth mode results from the improved interlayer mass transport.

Suggested Citation

  • P.C. Dastoor & J. Ellis & A. Reichmuth & H. Bullman & B. Holst & W. Allison, 1994. "HOMOEPITAXIAL GROWTH ON Cu(111) PROBED BY HELIUM ATOM SCATTERING," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(04), pages 509-512.
    • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000540
    DOI: 10.1142/S0218625X94000540
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