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Probing Surfaces And Interfaces With Optical Techniques

Author

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  • DIETRICH R.T. ZAHN

    (Lehrstuhl Halbleiterphysik, Technische Universität Chemnitz-Zwickau, Reichenhainer Str. 70, PSF 964, D-09009 Chemnitz, Germany)

Abstract

The potential of optical techniques for probing semiconductor surfaces and interfaces is discussed using the example of Raman spectroscopy. The surface sensitivity of the technique is demonstrated by the detection of vibrational modes of atomic monolayers on semiconductor substrates, for instance arsenic on silicon(111). The special feature of Raman spectroscopy, namely its chemical sensivity, is illustrated by two examples: the interdiffusion of group III overlayers, e.g., In on the group V substrate Sb and the detection of reacted layers at II–VI/III– V heterointerfaces. The example of II–VI/III–V heteroepitaxy also serves as an example for demonstrating the growth monitoring capabilities of optical techniques.

Suggested Citation

  • Dietrich R.T. Zahn, 1994. "Probing Surfaces And Interfaces With Optical Techniques," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(04), pages 421-428.
    • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:04:n:s0218625x94000382
    DOI: 10.1142/S0218625X94000382
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