Author
Listed:
- A.V. ZOTOV
(Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation)
- S.V. RYZHKOV
(Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation)
- V.G. LIFSHITS
(Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation)
- V.G. DUCHINSKY
(Far East State University, Vladivostok 690022, Russian Federation)
Abstract
The formation of the ordered surface structures upon successive deposition of Al and Sb onto the Si(100), Si(111), and Si(110) surfaces held at about 650°C were studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The primary emphasis was given to the investigation of the formation of (Al, Sb)/Si interface at total coverages of adsorbates in submonolayer range. In this case, according to AES data the adsorption of Al and Sb atoms proceeds collaterally in a simple additive manner. In the LEED observations, several new reconstructions,Si(100)c(4×4),Si(100)2×8,Si(100)2×6,Si(111)2×2,${\rm{Si}}\left( {110} \right)\left( {\begin{array}{*{20}c} 2 &3 \\ 0 & 9 \\\end{array}} \right)$, andSi(110)3×4which indicate the formation of the joint (Al, Sb)/Si surface phases were found. The conditions for the formation of the surface structures were summarized in the formation diagrams.
Suggested Citation
A.V. Zotov & S.V. Ryzhkov & V.G. Lifshits & V.G. Duchinsky, 1994.
"LEED-AES STUDY OF SURFACE STRUCTURES FORMED AT COADSORPTION OF AlAND SbON (100), (111), AND (110) SiSURFACES,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(02n03), pages 285-293.
Handle:
RePEc:wsi:srlxxx:v:01:y:1994:i:02n03:n:s0218625x9400028x
DOI: 10.1142/S0218625X9400028X
Download full text from publisher
As the access to this document is restricted, you may want to search for a different version of it.
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:01:y:1994:i:02n03:n:s0218625x9400028x. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.