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LEED-AES STUDY OF SURFACE STRUCTURES FORMED AT COADSORPTION OF AlAND SbON (100), (111), AND (110) SiSURFACES

Author

Listed:
  • A.V. ZOTOV

    (Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation)

  • S.V. RYZHKOV

    (Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation)

  • V.G. LIFSHITS

    (Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation)

  • V.G. DUCHINSKY

    (Far East State University, Vladivostok 690022, Russian Federation)

Abstract

The formation of the ordered surface structures upon successive deposition of Al and Sb onto the Si(100), Si(111), and Si(110) surfaces held at about 650°C were studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The primary emphasis was given to the investigation of the formation of (Al, Sb)/Si interface at total coverages of adsorbates in submonolayer range. In this case, according to AES data the adsorption of Al and Sb atoms proceeds collaterally in a simple additive manner. In the LEED observations, several new reconstructions,Si(100)c(4×4),Si(100)2×8,Si(100)2×6,Si(111)2×2,${\rm{Si}}\left( {110} \right)\left( {\begin{array}{*{20}c} 2 &3 \\ 0 & 9 \\\end{array}} \right)$, andSi(110)3×4which indicate the formation of the joint (Al, Sb)/Si surface phases were found. The conditions for the formation of the surface structures were summarized in the formation diagrams.

Suggested Citation

  • A.V. Zotov & S.V. Ryzhkov & V.G. Lifshits & V.G. Duchinsky, 1994. "LEED-AES STUDY OF SURFACE STRUCTURES FORMED AT COADSORPTION OF AlAND SbON (100), (111), AND (110) SiSURFACES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(02n03), pages 285-293.
  • Handle: RePEc:wsi:srlxxx:v:01:y:1994:i:02n03:n:s0218625x9400028x
    DOI: 10.1142/S0218625X9400028X
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