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The phosphorene under the external electronic field and strain

Author

Listed:
  • Tao Wang

    (College of Electrical Engineering, Department of Radiology, Second Affiliated Hospital, Zhejiang University, Hangzhou 310027, P. R. China)

  • Yan Liu

    (College of Electrical Engineering, Department of Radiology, Second Affiliated Hospital, Zhejiang University, Hangzhou 310027, P. R. China)

  • Wen Wen

    (College of Electrical Engineering, Department of Radiology, Second Affiliated Hospital, Zhejiang University, Hangzhou 310027, P. R. China)

  • Wei Guo

    (College of Electrical Engineering, Department of Radiology, Second Affiliated Hospital, Zhejiang University, Hangzhou 310027, P. R. China)

  • You Yin

    (Division of Electronics and Informatics, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 3768515, Japan)

Abstract

Using the ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximation (GGA), we investigate the bandgap tuning in monolayer phosphorene in terms of applying external electric fields perpendicular to the layers. The bandgap continuously decreases with the applied electric fields, eventually rendering them metallic. The phenomenon is explained by the giant stark effect. The interlayer P-P distance also result in the semiconductor-to-metal transition. The phosphorene exhibits the significant bandgap tuning ability under different strains with 5% variation. Our investigations show the bandgap change for the fabrication of novel electronic and photonic devices.

Suggested Citation

  • Tao Wang & Yan Liu & Wen Wen & Wei Guo & You Yin, 2017. "The phosphorene under the external electronic field and strain," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 28(12), pages 1-11, December.
    • Handle: RePEc:wsi:ijmpcx:v:28:y:2017:i:12:n:s0129183117501315
    DOI: 10.1142/S0129183117501315
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