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The Theoretical Research On I-V Curve In Multi-Quantum Wells Of Semiconductors

Author

Listed:
  • BIN YANG

    (Center for Condensed Matter Science and Technology, Harbin Institute of Technology Harbin, 150001, People's Republic of China)

  • JIE ZHANG

    (Center for Condensed Matter Science and Technology, Harbin Institute of Technology Harbin, 150001, People's Republic of China)

  • YONG-FANG ZHAO

    (Center for Condensed Matter Science and Technology, Harbin Institute of Technology Harbin, 150001, People's Republic of China)

  • XIAO-GONG JING

    (Center for Condensed Matter Science and Technology, Harbin Institute of Technology Harbin, 150001, People's Republic of China)

Abstract

TheI-Vcurves in multi-quantum wells of different semiconductors are studied theoretically using the formalism of the transmission coefficient directly derived from Schrödinger equation.Al0.5Ga0.5As/GaAsdouble-barrier quantum well,Al0.29Ga0.71As/GaAsmulti-quantum well, andAlSb/InAsdouble-barrier structure are calculated. The influences of well width, barrier width, temperature, Fermi energy onI-Vcharacteristic curves are discussed in detail. Calculated results show that obvious negative differential resistance effects presented by our simulatedI-Vcurves has a good agreement with previous experiments. Therefore, it can be a theoretical expectation to design experimentally high-quality semiconductor devices.

Suggested Citation

  • Bin Yang & Jie Zhang & Yong-Fang Zhao & Xiao-Gong Jing, 2006. "The Theoretical Research On I-V Curve In Multi-Quantum Wells Of Semiconductors," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 17(04), pages 561-570.
    • Handle: RePEc:wsi:ijmpcx:v:17:y:2006:i:04:n:s0129183106008686
    DOI: 10.1142/S0129183106008686
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