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Comparison of thin-slot formalisms for the FDTD analyses of narrow apertures

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  • Wen Song

Abstract

Thin-slot formalisms (TSF) in the literature have been briefly summarized. High resolution standard FDTD simulation results are presented in this paper to support the comparison. From comparison of the coupled electric field component through two thin-slots at different distances from the slot plane, some conclusions are drawn. It is found the uniform TSF will result in huge error when used to simulate the coupling of the thin-slots. The capacitance TSF and an alternative expression of the capacitance TSF are not as accurate as the improved capacitance TSF. Instability may occur when the hybrid TSF is used. The improved capacitance TSF and the enhanced TSF are suitable for the simulation of thin-slots.

Suggested Citation

  • Wen Song, 2018. "Comparison of thin-slot formalisms for the FDTD analyses of narrow apertures," Journal of Electromagnetic Waves and Applications, Taylor & Francis Journals, vol. 32(11), pages 1448-1456, July.
    • Handle: RePEc:taf:tewaxx:v:32:y:2018:i:11:p:1448-1456
    DOI: 10.1080/09205071.2018.1442262
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