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A K-band power amplifier in 0.18 μm CMOS process with slow-wave structure

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  • Bo Zhang
  • Gang He
  • Xubang Shen

Abstract

A 18–24 GHz broadband power amplifier (PA) by 0.18-μm CMOS technology is presented in this article. The low loss microstrip line matching technique is used to reduce transmission losses and achieve higher gain, PAE, and enough output power. An improved gain-boosting technique is also included in the PA architecture to improve high-frequency gain and gain flatness. The measurement results show that small-signal gain is large than 18.5 dB from 18 to 24 GHz, while the gain variation is less than 1.5 dB. The maximum PAE is about 18%, and the output P1dB is 13.1 and 15 dBm Psat.

Suggested Citation

  • Bo Zhang & Gang He & Xubang Shen, 2015. "A K-band power amplifier in 0.18 μm CMOS process with slow-wave structure," Journal of Electromagnetic Waves and Applications, Taylor & Francis Journals, vol. 29(16), pages 2269-2274, November.
    • Handle: RePEc:taf:tewaxx:v:29:y:2015:i:16:p:2269-2274
    DOI: 10.1080/09205071.2015.1073125
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