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Cu(In,Ga)Se2 solar cells, numerical simulation and analysis

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  • Hocine Heriche
  • Zahir Rouabah
  • Sabrina Benabbas

Abstract

In this work, we have used a one-dimensional simulation program called the solar cell capacitance simulator (SCAPS) to design solar cells with the structure SnOx/CdS/CIGS (SnOx window, CdS buffer and CIGS absorber material) and study their performance. To improve efficiency we have used a grading layer of CIGS but with different band-gaps. Cu(In,Ga) Se2 has grading band-gaps varying in range from 1.04 to 1.68 eV, with the corresponding Ga content x = 0 to 1. The grading layer used improves the open-circuit voltage (VOC) and also the short-circuit current density (JSC). Photovoltaic parameters were determined using the current density-voltage (J-V) curve. In addition, we have studied the effects of operating temperature on grading layer CIGS solar cells. Our numerical simulation gives some important indications to lead to higher efficiency of CIGS solar cells.

Suggested Citation

  • Hocine Heriche & Zahir Rouabah & Sabrina Benabbas, 2016. "Cu(In,Ga)Se2 solar cells, numerical simulation and analysis," African Journal of Science, Technology, Innovation and Development, Taylor & Francis Journals, vol. 8(4), pages 327-330, August.
  • Handle: RePEc:taf:rajsxx:v:8:y:2016:i:4:p:327-330
    DOI: 10.1080/20421338.2015.1118867
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