The preparation of organic light-emitting diode encapsulation barrier layer by low-temperature plasma-enhanced chemical vapor deposition: a study on the $$\hbox {SiO}_\mathrm{x}\hbox {N}_\mathrm{y}$$ SiO x N y film parameter optimization

This study prepared $$\hbox {SiO}_\mathrm{x}\hbox {N}_\mathrm{y}$$ SiO x N y film by using plasma-enhanced chemical vapor deposition in organic light-emitting diode (OLED) encapsulation to prevent the invasion of moisture and oxygen for longer light-emitting lifetime of OLED components. It applied high density inductively coupled plasma for the coating of film on polyethersulfone, silicon and glass substrate, and discussed the relevance between process parameters and quality characteristics including coating uniformity, coating thickness and moisture permeation. This study used Taguchi method to plan the experiment and calculated the optimal parameters of each quality, used technique for order preference by similarity to ideal solution and grey relational analysis to determine the optimal parameter of all qualities. The back-propagation neural network was combined with Levenberg–Marquardt algorithm to construct the simulation and prediction system. Based on the quality optimization design, the single layer film’s moisture permeation rate was 0.02 g/m $$^{2}$$ 2 /day, the maximum coating thickness reached 420 nm, and the fastest rate was 21 nm/min, which was higher than the industrial standard specification (10 nm/min) by 110 %.