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γ-ray irradiation effect on the electrical transport properties of Cu films

Author

Listed:
  • Zhaoguo Li

    (Research Center of Laser Fusion, China Academy of Engineering Physics)

  • Dawei Yan

    (Research Center of Laser Fusion, China Academy of Engineering Physics)

  • Zhiqiang Zhan

    (Research Center of Laser Fusion, China Academy of Engineering Physics)

  • Jiangshan Luo

    (Research Center of Laser Fusion, China Academy of Engineering Physics)

  • Zhiqing Wu

    (Research Center of Laser Fusion, China Academy of Engineering Physics)

  • Fan Lei

    (Institute of Chemical Materials, China Academy of Engineering Physics)

  • Yudan He

    (Research Center of Laser Fusion, China Academy of Engineering Physics)

  • Lei Jin

    (Research Center of Laser Fusion, China Academy of Engineering Physics)

  • Bo Yang

    (Research Center of Laser Fusion, China Academy of Engineering Physics)

  • Qiubo Fu

    (Institute of Chemical Materials, China Academy of Engineering Physics)

Abstract

We reported the electrical transport properties of Cu films under γ-ray irradiation. The temperature dependence of resistance curves coincides with each other before and after irradiation when the irradiation dose is $$\lesssim 3.6\times {10}^{6} \text{rad}(\text{Si})$$ ≲ 3.6 × 10 6 rad ( Si ) . The resistance of the irradiated Cu film is greater than that of the non-irradiated film across the whole temperature range when the irradiation dose is $$\gtrsim 3.6\times {10}^{7} \text{rad}(\text{Si})$$ ≳ 3.6 × 10 7 rad ( Si ) . This phenomenon is caused by the enhanced surface oxidation effect induced by γ-ray irradiation, and this mechanism has been confirmed by chemical composition analysis. Furthermore, the electrical transport properties of Cu films with and without polyimide coverage were measured during γ-ray irradiation. The experimental results showed that the bare Cu film undergoes surface oxidation, while the Cu film covered by polyimide does not. These results further validate the γ-irradiation enhanced oxidation mechanism in Cu films. Graphical abstract The resistance of the irradiated Cu film greater than that of the non-irradiated film was observed in the whole temperature range when irradiation dose is larger than a critical dose. The physical mechanism of above phenomenon is ascribed to the enhanced surface oxidation effect induced by γ-ray irradiation. The electrical transport properties of Cu films with and without polyimide coverage were also measured during γ-ray irradiation. The experimental results showed that the bare Cu film undergoes surface oxidation, while the Cu film covered by polyimide does not. These results further validate the γ-irradiation enhanced oxidation mechanism in Cu films.

Suggested Citation

  • Zhaoguo Li & Dawei Yan & Zhiqiang Zhan & Jiangshan Luo & Zhiqing Wu & Fan Lei & Yudan He & Lei Jin & Bo Yang & Qiubo Fu, 2025. "γ-ray irradiation effect on the electrical transport properties of Cu films," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 98(7), pages 1-8, July.
  • Handle: RePEc:spr:eurphb:v:98:y:2025:i:7:d:10.1140_epjb_s10051-025-00966-7
    DOI: 10.1140/epjb/s10051-025-00966-7
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