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Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

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  • Paziljon Baymatov

    (Namangan State University)

  • Bakhrom Abdulazizov

    (Namangan State University)

  • Makhmudjon Tokhirjonov

    (Namangan State University)

Abstract

This paper presents the results of numerical calculations of the change in the probability of an electron passing through a two-barrier heterostructure depending on the thickness of a thin InAs nanolayer embedded between the barrier and the barrier (AlAs). Using these calculations, the half-thickness of the centre of the electronic energy level (Г) was determined. The values of the first and second energy levels corresponding to the peak of the transition probability were also found. Graphical abstract The profile of a two-barrier heterostructure with an InAs nanolayer embedded in the centre

Suggested Citation

  • Paziljon Baymatov & Bakhrom Abdulazizov & Makhmudjon Tokhirjonov, 2024. "Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 97(4), pages 1-5, April.
    • Handle: RePEc:spr:eurphb:v:97:y:2024:i:4:d:10.1140_epjb_s10051-024-00689-1
    DOI: 10.1140/epjb/s10051-024-00689-1
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    1. Paziljon Baymatov & Bakhrom Abdulazizov & Makhmudjon Tokhirjonov, 2023. "Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 96(8), pages 1-7, August.
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