Author
Listed:
- Le Thi Kieu Oanh
(University of Science - VNUHCM
Vietnam National University)
- Nguyen Quoc Khanh
(University of Science - VNUHCM
Vietnam National University)
- Dang Khanh Linh
(Ho Chi Minh City University of Education
Ho Chi Minh City University of Education)
Abstract
We calculate the conductivity of graphene in three monolayer graphene double-layer structures taking into account the presence of correlations of charged impurities. We use the Boltzmann transport theory and continuum model for the structure factor S $$(\mathbf {q})$$ ( q ) to study the electrical conductivity of monolayer graphene in presence of the second layer (bilayer graphene, monolayer graphene, or two-dimensional electron gas (2DEG)) due to the screened Coulomb scattering at T = 0 K for different values of correlation length $$r_{\text {\tiny 0}}$$ r 0 , interlayer distance d and dielectric constant $$\epsilon _{\text {\tiny 2}}, \epsilon _{\text {\tiny 3}}$$ ϵ 2 , ϵ 3 , and 2DEG material parameters. We find that for considered double-layer systems, the electrical conductivity $$\sigma $$ σ increases with decreasing d for all values of $$r_0$$ r 0 and increases strongly (slightly) with increasing $$\epsilon _2(\epsilon _3)$$ ϵ 2 ( ϵ 3 ) . We also show that $$\sigma $$ σ increases slightly (considerably) with increasing $$\epsilon _3$$ ϵ 3 for $$\epsilon _3 = \epsilon _{2DEG}(\epsilon _3 = \epsilon _2 = \epsilon _{2DEG})$$ ϵ 3 = ϵ 2 D E G ( ϵ 3 = ϵ 2 = ϵ 2 D E G ) and the influence of correlations on $$\sigma $$ σ is negligible for low impurity concentration of layer I $$n_{i1}$$ n i 1 ( $$n_{i1} \preceq $$ n i 1 ⪯ $$ 10^{12} {\text{ cm }}^{-2}$$ 10 12 cm - 2 ). GraphicAbstract
Suggested Citation
Le Thi Kieu Oanh & Nguyen Quoc Khanh & Dang Khanh Linh, 2022.
"Effect of charged impurity correlations on electrical conductivity in monolayer graphene double-layer systems,"
The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 95(1), pages 1-10, January.
Handle:
RePEc:spr:eurphb:v:95:y:2022:i:1:d:10.1140_epjb_s10051-021-00273-x
DOI: 10.1140/epjb/s10051-021-00273-x
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