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Transition kinetics of impurity doped quantum dots under time-dependent confinement potential: role of noise

Author

Listed:
  • Anuja Ghosh

    (Physical Chemistry Section, Visva Bharati University, Santiniketan)

  • Sk. Md. Arif

    (Physical Chemistry Section, Visva Bharati University, Santiniketan)

  • Aindrila Bera

    (Physical Chemistry Section, Visva Bharati University, Santiniketan)

  • Manas Ghosh

    (Physical Chemistry Section, Visva Bharati University, Santiniketan)

Abstract

Present study endeavors to analyze the role of Gaussian white noise and fluctuating confinement potential on time-average excitation rate (TAER) of impurity doped quantum dot (QD). The TAER profiles are exhaustively monitored as a number of physical quantities are varied over a range with and without noise. Application of noise to the system takes place in two different pathways known as ‘additive’ and ‘multiplicative’. And the fluctuation of the confinement potential has been considered to be cosinusoidal and random which induces the excitation of ground state electronic population to the higher states. The TAER profiles comprise of features like steady increase/decrease, maximization, minimization and saturation. However, the specific characteristics of a particular profile depend on presence/absence of noise, the noise mode, the nature of fluctuating confinement potential and the identity of the physical quantity being varied. Production of large TAER of doped QD depends on noise-mode and nature of fluctuating confinement potential based on which the noise strength is required to be maintained in the vicinity of some typical values. Graphical abstract

Suggested Citation

  • Anuja Ghosh & Sk. Md. Arif & Aindrila Bera & Manas Ghosh, 2020. "Transition kinetics of impurity doped quantum dots under time-dependent confinement potential: role of noise," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 93(5), pages 1-11, May.
    • Handle: RePEc:spr:eurphb:v:93:y:2020:i:5:d:10.1140_epjb_e2020-10102-x
    DOI: 10.1140/epjb/e2020-10102-x
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    Mesoscopic and Nanoscale Systems;

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