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Electron-hole asymmetry in electrical conductivity of low-fluorinated graphene: numerical study

Author

Listed:
  • Dmitry V. Kolesnikov

    (Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research)

  • Vladimir A. Osipov

    (Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research)

Abstract

By using the real-space Green-Kubo formalism we study numerically the electron transport properties of low-fluorinated graphene. At low temperatures the diffuse transport regime is expected to be prevalent, and we found a pronounced electron-hole asymmetry in electrical conductivity as a result of quasi-resonant scattering on the localized states. For the finite temperatures in the variable-range hopping transport regime the interpretation of numerical results leads to the appearance of local minima and maxima of the resistance near the energies of the localized states. A comparison with the experimental measurements of the resistance in graphene samples with various fluorination degrees is discussed. Graphical abstract

Suggested Citation

  • Dmitry V. Kolesnikov & Vladimir A. Osipov, 2020. "Electron-hole asymmetry in electrical conductivity of low-fluorinated graphene: numerical study," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 93(4), pages 1-7, April.
  • Handle: RePEc:spr:eurphb:v:93:y:2020:i:4:d:10.1140_epjb_e2020-100508-3
    DOI: 10.1140/epjb/e2020-100508-3
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    Keywords

    Solid State and Materials;

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