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2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties

Author

Listed:
  • Negin Fatahi

    (Kermanshah Branch, Islamic Azad University)

  • D. M. Hoat

    (Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, Ton Duc Thang University
    Faculty of Applied Sciences, Ton Duc Thang University)

  • Amel Laref

    (Department, College of Science, King Saud University)

  • Shorin Amirian

    (Kermanshah Branch, Islamic Azad University)

  • A. H. Reshak

    (Physics Department, College of Science, Basrah University
    Nanotechnology and Catalysis Research Center (NANOCAT), University of Malaya
    Faculty of Mechanical Engineering, CTU in Prague, Technicka 4)

  • Mosayeb Naseri

    (Kermanshah Branch, Islamic Azad University)

Abstract

The stability and electronic and optical properties of two-dimensional (2D) SnTe monolayer has been systematically studied by using first-principles calculations based on density functional theory. Our computations demonstrate that the predicted 2D SnTe monolayer is a stable quasi-direct semiconductor. Also, analysis of its electronic property shows that the ground state of this monolayer is a quasi-direct semiconductor with a band gap of ~2.00. This band gap can be effectively modulated by external strains. Investigation of optical properties shows that monolayer SnTe exhibits significant absorption and reflectivity in the ultraviolet region of the electromagnetic spectrum. Graphical abstract

Suggested Citation

  • Negin Fatahi & D. M. Hoat & Amel Laref & Shorin Amirian & A. H. Reshak & Mosayeb Naseri, 2020. "2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 93(2), pages 1-7, February.
    • Handle: RePEc:spr:eurphb:v:93:y:2020:i:2:d:10.1140_epjb_e2020-100543-6
    DOI: 10.1140/epjb/e2020-100543-6
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    Keywords

    Solid State and Materials;

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