Author
Listed:
- Shu-Long Li
(Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University)
- Xiao-Xia Yu
(School of Aerospace Engineering, Beijing Institute of Technology)
- Ya-Lin Li
(Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University)
- Pei Gong
(Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University)
- Ya-Hui Jia
(Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University)
- Xiao-Yong Fang
(Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University)
- Mao-Sheng Cao
(School of Materials Science and Engineering, Beijing Institute of Technology)
Abstract
A modified formula to calculate the axial conductivity of nanowires was proposed based on the one-dimensional quantum state density distribution and Boltzmann transport theory. Numerical simulations of the ZnO nanowires (ZnONWs) and Nitrogen-doped ZnO nanowires (N-ZnONWs) were implemented using data from the first principles calculation. The results indicate that ZnONWs are low-conductivity wide band-gap semiconductors owing to their low carrier concentrations at room temperature, with N-doping increasing the conductivity. The N-ZnONWs carrier concentrations increased with increasing temperature, and possessed significantly higher carrier concentrations than ZnONWs. With an increase in diameter, the ZnONWs conductivities increased, whereas the N-ZnONWs conductivities decreased. Graphical abstract
Suggested Citation
Shu-Long Li & Xiao-Xia Yu & Ya-Lin Li & Pei Gong & Ya-Hui Jia & Xiao-Yong Fang & Mao-Sheng Cao, 2019.
"Temperature- and diameter-dependent electrical conductivity of nitrogen doped ZnO nanowires,"
The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 92(7), pages 1-7, July.
Handle:
RePEc:spr:eurphb:v:92:y:2019:i:7:d:10.1140_epjb_e2019-100208-3
DOI: 10.1140/epjb/e2019-100208-3
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