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Effects of heteroatom (B or N)-doping on the electronic and transport properties of armchair silicene nanoribbon

Author

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  • Zhiyong Wang

    (College of Science, Guilin University of Technology)

  • Jingjin Chen

    (College of Science, Guilin University of Technology)

  • Shuai Yang

    (College of Science, Guilin University of Technology)

  • Jianrong Xiao

    (College of Science, Guilin University of Technology)

  • Mengqiu Long

    (Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, Central South University)

Abstract

We investigate the effects of heteroatom (boron or nitrogen atom)-doping on the electronic and transport properties of armchair silicene nanoribbon by means of the First-principles method. The calculated results show that the bandgap of armchair silicene nanoribbons (ASiNRs) can be modulated by changing the distance between two doping sites. The ASiNRs appear the semi-metallic property with two boron atoms doping, while the ASiNRs transform from semiconducting to metallic property with two nitrogen atoms doping. It can be found that the bandgaps of ASiNRs are decreasing with the increasing distance between boron atom and nitrogen atom. The transport properties of ASiNRs with B/N codoping are also investigated, the differential conductance appears an oscillatory behavior, it is hoped that it may be useful for designing the silicene-based electronic devices. Graphical abstract

Suggested Citation

  • Zhiyong Wang & Jingjin Chen & Shuai Yang & Jianrong Xiao & Mengqiu Long, 2019. "Effects of heteroatom (B or N)-doping on the electronic and transport properties of armchair silicene nanoribbon," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 92(11), pages 1-6, November.
    • Handle: RePEc:spr:eurphb:v:92:y:2019:i:11:d:10.1140_epjb_e2019-100279-0
    DOI: 10.1140/epjb/e2019-100279-0
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    Solid State and Materials;

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