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Enhanced ferroelectric properties and energy storage density in PLZT/BNKT heterolayered thin films prepared by sol-gel method

Author

Listed:
  • Ngo Duc Quan

    (School of Engineering Physics, Ha Noi University of Science and Technology
    International Training Institute for Materials Scince, Hanoi University of Science and Technology)

  • Nguyen Van Hong

    (School of Engineering Physics, Ha Noi University of Science and Technology)

  • Tran Quoc Toan

    (Vietnam Academy of Science and Technology, Graduate University of Science and Technology
    Vietnam Academy of Science and Technology, Institute of Natural Products Chemistry)

  • Vu Ngoc Hung

    (International Training Institute for Materials Scince, Hanoi University of Science and Technology)

Abstract

The PLZT/BNKT heterolayered thin films on Pt/Ti/SiO2/Si substrates were fabricated by chemical solution deposition. The influence of different heterolayered structures on the microstructures, ferroelectric and energy storage properties of the films was investigated and clarified in detail. Based on the heterolayered structures, ferroelectric properties and energy storage density (Jreco) of the films were significantly enhanced. The maximum polarization (Pmax) and Pmax-Pr get the maximum values of 71.4 μC/cm2 and 56.7 μC/cm2, respectively. The extreme value of recoverable energy storage density was 8.1 J/cm3 for the heterolayered film S(7-1). These results demonstrate that the PLZT/BNKT heterolayered films are real potential candidates for electrostatic energy storage devices that are environment-friendly. Graphical abstract

Suggested Citation

  • Ngo Duc Quan & Nguyen Van Hong & Tran Quoc Toan & Vu Ngoc Hung, 2018. "Enhanced ferroelectric properties and energy storage density in PLZT/BNKT heterolayered thin films prepared by sol-gel method," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 91(12), pages 1-6, December.
    • Handle: RePEc:spr:eurphb:v:91:y:2018:i:12:d:10.1140_epjb_e2018-90503-0
    DOI: 10.1140/epjb/e2018-90503-0
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    Solid State and Materials;

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