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Band gap modulation of graphene on SiC

Author

Listed:
  • Stefan Kolev

    (Institute of Electronics–Bulgarian Academy of Sciences)

  • Victor Atanasov

    (Faculty of Physics, Sofia University)

  • Hristiyan Aleksandrov

    (Faculty of Chemistry and Pharmacy, Sofia University)

  • Teodor Milenov

    (Institute of Electronics–Bulgarian Academy of Sciences)

Abstract

A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.

Suggested Citation

  • Stefan Kolev & Victor Atanasov & Hristiyan Aleksandrov & Teodor Milenov, 2018. "Band gap modulation of graphene on SiC," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 91(11), pages 1-7, November.
    • Handle: RePEc:spr:eurphb:v:91:y:2018:i:11:d:10.1140_epjb_e2018-90154-1
    DOI: 10.1140/epjb/e2018-90154-1
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    Keywords

    Solid State and Materials;

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