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Valley polarized insulator-metal transition and valley filtering effect in graphene

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  • Jie Cao
  • Shi-Jie Xiong

Abstract

We investigate the properties of a graphene system taking into account both the on-site Coulomb repulsion and the Rashba spin-orbit coupling caused by a transverse electric field by using a mean-field approximation of the Hubbard model. It is found that by increasing the strength of the Rashba spin-orbit coupling, the system with a strong Coulomb interaction can successively go through three phases: valley polarized insulator, valley polarized metal, and normal metal, in which the first two phases are new ones characterized by their specific band structures. Hence, a valley polarized insulator-metal phase transition can occur by changing the strength of the spin-orbit coupling in this system. We propose a mechanism of valley filter based on the gated valley polarized insulator, in which a net K or K′ valley current can be obtained. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2015

Suggested Citation

  • Jie Cao & Shi-Jie Xiong, 2015. "Valley polarized insulator-metal transition and valley filtering effect in graphene," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 88(3), pages 1-7, March.
    • Handle: RePEc:spr:eurphb:v:88:y:2015:i:3:p:1-7:10.1140/epjb/e2015-50732-3
    DOI: 10.1140/epjb/e2015-50732-3
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    Solid State and Materials;

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