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Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films

Author

Listed:
  • Shuji Wakaiki
  • Hideki Ichida
  • Toshiki Kawase
  • Kohji Mizoguchi
  • DaeGwi Kim
  • Masaaki Nakayama
  • Yasuo Kanematsu

Abstract

We have investigated the photoluminescence (PL) dynamics of ZnO thin films under intense excitation conditions using an optical-Kerr-gating method. The PL bands originating from exciton-exciton scattering (P emission) and biexciton (M emission) have been observed at 10 K. The ultrashort gating time of 0.6 ps has enabled us to obtain precise information of the temporal profiles of the peak energies and the intensities of the P- and M-PL bands. We have found that the decay time of the P emission becomes longer with increasing film thickness, while that of the M emission is independent of the film thickness. Although the decay time of the P emission is an increasing function of the film thickness, the relation is not in proportion, which is contrary to the predicted proportionality based on a simple model of photon-like polariton propagation. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Suggested Citation

  • Shuji Wakaiki & Hideki Ichida & Toshiki Kawase & Kohji Mizoguchi & DaeGwi Kim & Masaaki Nakayama & Yasuo Kanematsu, 2013. "Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 86(9), pages 1-4, September.
    • Handle: RePEc:spr:eurphb:v:86:y:2013:i:9:p:1-4:10.1140/epjb/e2013-30631-5
    DOI: 10.1140/epjb/e2013-30631-5
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