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Half-filled Kondo lattice on the honeycomb lattice

Author

Listed:
  • Yin Zhong
  • Ke Liu
  • Yu-Feng Wang
  • Yong-Qiang Wang
  • Hong-Gang Luo

Abstract

The unique linear density of state around the Dirac points for the honeycomb lattice brings much novel features in strongly correlated models. Here we study the ground-state phase diagram of the Kondo lattice model on the honeycomb lattice at half-filling by using an extended mean-field theory. By treating magnetic interaction and Kondo screening on an equal footing, it is found that besides a trivial discontinuous first-order quantum phase transition between well-defined Kondo insulator and antiferromagnetic insulating state, there can exist a wide coexistence region with both Kondo screening and antiferromagnetic orders in the intermediate coupling regime. In addition, the stability of Kondo insulator requires a minimum strength of the Kondo coupling. These features are attributed to the linear density of state, which are absent in the square lattice. Furthermore, fluctuation effect beyond the mean-field decoupling is analyzed and the corresponding antiferromagnetic spin-density-wave transition falls into the O(3) universal class. Comparatively, we also discuss the Kondo necklace and the Kane-Mele-Kondo (KMK) lattice models on the same lattice. Interestingly, it is found that the topological insulating state is unstable to the usual antiferromagnetic ordered states at half-filling for the KMK model. The present work may be helpful for further study on the interplay between conduction electrons and the densely localized spins on the honeycomb lattice. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Suggested Citation

  • Yin Zhong & Ke Liu & Yu-Feng Wang & Yong-Qiang Wang & Hong-Gang Luo, 2013. "Half-filled Kondo lattice on the honeycomb lattice," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 86(5), pages 1-8, May.
  • Handle: RePEc:spr:eurphb:v:86:y:2013:i:5:p:1-8:10.1140/epjb/e2013-31091-7
    DOI: 10.1140/epjb/e2013-31091-7
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    Solid State and Materials;

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