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Spectator and participator processes in the resonant photon-in and photon-out spectra at the Ce L 3 edge of CeO 2

Author

Listed:
  • A. Kotani
  • K. Kvashnina
  • S. Butorin
  • P. Glatzel

Abstract

We study both theoretically and experimentally the photon-in and photon-out spectra of CeO 2 , which are caused by the Ce 2p to Ce 5d excitation followed by the three different de-excitation channels: (i) Ce 3d to Ce 2p (denoted by 3d-RXES), (ii) O 2p to Ce 2p (v-RXES), and (iii) Ce 5d to Ce 2p (RIXS). In 3d- and v-RXES, the 5d electron plays a role of a spectator, but in RIXS it is a participator. By extending our single impurity Anderson model (SIAM), which was used recently for our calculations of v- and 3d-RXES spectra of CeO 2 , we study the polarization dependence in the spectator and participator spectra, and we perform more detailed calculations for 3d- and v-RXES spectral features, as well as new calculations for the RIXS spectrum with charge transfer excitations. The polarization dependence is different for the spectator and participator spectra; we have no polarization correlation between the incident and emitted photons for the spectator spectra but a strong polarization correlation for the participator spectrum. The theoretical calculations predict that the charge transfer excitations in RIXS occur in the transfer-energy range overlapped with v-RXES, but the RIXS and v-RXES spectra can be discriminated by taking advantage of the different polarization dependence. The overlapped RIXS and v-RXES spectra are observed successfully by our experiments and well reproduced by our SIAM calculations. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2012

Suggested Citation

  • A. Kotani & K. Kvashnina & S. Butorin & P. Glatzel, 2012. "Spectator and participator processes in the resonant photon-in and photon-out spectra at the Ce L 3 edge of CeO 2," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 85(8), pages 1-13, August.
  • Handle: RePEc:spr:eurphb:v:85:y:2012:i:8:p:1-13:10.1140/epjb/e2012-30079-1
    DOI: 10.1140/epjb/e2012-30079-1
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    Keywords

    Solid State and Materials;

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