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Positively and negatively charged magneto excitons in GaAs/Ga 1- x Al x As double quantum wells

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  • N. Angayarkanni
  • C. K. Yoo
  • A. John Peter

Abstract

Binding energies of positively and negatively charged magneto excitons are investigated by using the variational procedure within the single band effective mass approximation. A linear Rashba spin-orbit coupling module with the position dependent electron is included in our calculations in order to study the change in spin-orbit splitting energy. In continuation, the interband optical transition, with and without the exciton, is computed as a function of well width. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. It is observed that (i) negative trions are found to have a higher binding energy than positive trions, (ii) the exciton binding energy and the interband emission energy both increase when the well width is decreased and (iii) the effect of exciton has influence on the interband emission energy. The results of the present investigation are found to be in good agreement with the recently published results. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010

Suggested Citation

  • N. Angayarkanni & C. K. Yoo & A. John Peter, 2010. "Positively and negatively charged magneto excitons in GaAs/Ga 1- x Al x As double quantum wells," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 78(4), pages 489-496, December.
    • Handle: RePEc:spr:eurphb:v:78:y:2010:i:4:p:489-496
    DOI: 10.1140/epjb/e2010-10693-7
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