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Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations

Author

Listed:
  • Y. J. Zhang
  • H.-L. Shi
  • S. X. Wang
  • P. Zhang
  • R. W. Li

Abstract

In this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al 14 Gd 2 N 16 with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010

Suggested Citation

  • Y. J. Zhang & H.-L. Shi & S. X. Wang & P. Zhang & R. W. Li, 2010. "Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 77(3), pages 345-349, October.
  • Handle: RePEc:spr:eurphb:v:77:y:2010:i:3:p:345-349
    DOI: 10.1140/epjb/e2010-00273-4
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