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Γ-X mixing in GaAs-Ga 1-x Al x As quantum wells under hydrostatic pressure

Author

Listed:
  • M. E. Mora-Ramos
  • S. Y. López
  • C. A. Duque

Abstract

The mixing between the Γ and X conduction-band valleys in GaAs-Ga 1-x Al x As quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ-X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga 1-x Al x As quantum wells. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2008

Suggested Citation

  • M. E. Mora-Ramos & S. Y. López & C. A. Duque, 2008. "Γ-X mixing in GaAs-Ga 1-x Al x As quantum wells under hydrostatic pressure," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 62(3), pages 257-261, April.
  • Handle: RePEc:spr:eurphb:v:62:y:2008:i:3:p:257-261
    DOI: 10.1140/epjb/e2008-00161-6
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