IDEAS home Printed from
   My bibliography  Save this article

Dispersion and thermal resistivity in silicon nanofilms by molecular dynamics


  • P. Heino



On nanoscale, thermal conduction is affected by system size. The reasons are increased phonon scattering and changes in phonon group velocity. In this paper, the in-plane thermal resistivity of nanoscale silicon thin films is analyzed by molecular dynamics (MD) techniques. Modifications to the dispersion relation are calculated directly with MD methods at high temperature. The results indicate that the dispersion relation starts to change for very thin films, at around two nanometers. The reasons are band folding and phonon confinement. Thermal resistivity is analyzed by the direct non-equilibrium method, and the results are compared to kinetic theory with modified dispersion relations. Thermal resistivity is affected by both surface scattering and dispersion. Moreover, in thin films, the characteristic vibrational frequency decreases, which in standard anharmonic scattering models indicates a longer relaxation time and affects the resistivity. The results indicate that in very thin films, the resistivity becomes highly anisotropic due to differences in surface scattering. In two cases, surface scattering was found to be the most important mechanism for increasing thermal resistivity, while in one case, phonon confinement was found to increase resistivity more than surface scattering. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Suggested Citation

  • P. Heino, 2007. "Dispersion and thermal resistivity in silicon nanofilms by molecular dynamics," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 60(2), pages 171-179, November.
  • Handle: RePEc:spr:eurphb:v:60:y:2007:i:2:p:171-179
    DOI: 10.1140/epjb/e2007-00342-9

    Download full text from publisher

    File URL:
    Download Restriction: Access to full text is restricted to subscribers.

    As the access to this document is restricted, you may want to search for a different version of it.


    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:spr:eurphb:v:60:y:2007:i:2:p:171-179. See general information about how to correct material in RePEc.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: (Sonal Shukla) or (Rebekah McClure). General contact details of provider: .

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service hosted by the Research Division of the Federal Reserve Bank of St. Louis . RePEc uses bibliographic data supplied by the respective publishers.