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From compact point defects to extended structures in silicon

Author

Listed:
  • Y. A. Du
  • R. G. Hennig
  • T. J. Lenosky
  • J. W. Wilkins

Abstract

First-principles studies of the formation and dynamics of silicon interstitial-clusters suggest a possible growth mechanism of silicon interstitial-chains as seen in macroscopic 311 planar defects. The relative populations of the three lowest-energy silicon tri-interstitials equilibrate within a few microseconds. Unfortunately, the tri-interstitial chain is unstable, quickly decaying to the ground-state interstitial. However, the four-interstitial chain with escape barriers of 0.54 eV is relatively stable and can be formed by exothermic capture of an interstitial by the ground-state tri-interstitial. This first successful step seems capable of growing longer chains. If one chain eases the formation of a second parallel chain, this may start the process of forming 311 planar defects. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Suggested Citation

  • Y. A. Du & R. G. Hennig & T. J. Lenosky & J. W. Wilkins, 2007. "From compact point defects to extended structures in silicon," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 57(3), pages 229-234, June.
    • Handle: RePEc:spr:eurphb:v:57:y:2007:i:3:p:229-234
    DOI: 10.1140/epjb/e2007-00176-5
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