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Electronic properties of multi-quantum dot structures in Cd 1-x Zn x S alloy semiconductors

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Listed:
  • N. Safta
  • A. Sakly
  • H. Mejri
  • M. A. Zaïdi

Abstract

In this paper, we present a theoretical study of the quantized electronic states in Cd 1-x Zn x S quantum dots. The shape of the confining potential, the subband energies and their eigen envelope wave functions are calculated by solving a one-dimensional Schrödinger equation. Electrons and holes are assumed to be confined in dots having a flattened cylindrical geometry with a finite barrier height at the boundary. Optical absorption measurements are used to fit the bandgap edge of the Cd 1-x Zn x S nanocrystals. An analysis of the electron band parameters has been made as a function of Zn composition. Two main features were revealed: (i) a multiplicity in Cd 1-x Zn x S quantum dots with different crystalline sizes has been found to fit accurately experimental data in the composition range 0 ≤x ≤0.2; (ii) the fit did not, however, show a multiplicity for x higher than 0.4. On the other hand, we have calculated the energy level structure of coupled Cd 1-x Zn x S semiconductor quantum dots using the tight-binding approximation. As is found the Zn composition x=0.4 is expected to be the most favorable to give rise a superlattice behavior for the Cd 1-x Zn x S quantum dots studied. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Suggested Citation

  • N. Safta & A. Sakly & H. Mejri & M. A. Zaïdi, 2006. "Electronic properties of multi-quantum dot structures in Cd 1-x Zn x S alloy semiconductors," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 53(1), pages 35-38, September.
  • Handle: RePEc:spr:eurphb:v:53:y:2006:i:1:p:35-38
    DOI: 10.1140/epjb/e2006-00350-3
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