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Effect of nitrogen concentration on the electronic and vibrational properties of zinc-blende InN x P 1-x (x > 0.01)

Author

Listed:
  • M. Debbichi
  • A. Ben Fredj
  • A. Bhouri
  • N. Bouarissa
  • M. Said

Abstract

Taking into account the recent advances in the epitaxial growth of single-crystal InN leading to a drastic re-evaluation of its fundamental energy band gap, we have studied the electronic properties of InN x P 1-x (x > 0.01) ternary alloy. Using the empirical pseudopotential method under the virtual crystal approximation, combined with the Harrison bond orbital model, the band gap at Γ, X and L points, the effective masses of the Γ valley and the electronic charge densities are calculated as a function of nitrogen composition. The fitted expressions of the energy band gaps indicate that the bowing parameter at Γ reached a broad value for very low nitrogen incorporation ( $x\le 1\%$ ). Furthermore, the band gap at Γ point decreases drastically with increasing nitrogen composition up to 1%. The elastic constants and the optical phonon frequencies are also reported. Our theoretical results provide a good agreement with the available data. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Suggested Citation

  • M. Debbichi & A. Ben Fredj & A. Bhouri & N. Bouarissa & M. Said, 2006. "Effect of nitrogen concentration on the electronic and vibrational properties of zinc-blende InN x P 1-x (x > 0.01)," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 51(1), pages 17-23, May.
    • Handle: RePEc:spr:eurphb:v:51:y:2006:i:1:p:17-23
    DOI: 10.1140/epjb/e2006-00187-8
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