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Influence of correlation and temperature on the electronic structure of bulk and thin film GdN

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  • S. Bhattacharjee
  • S. M. Jaya

Abstract

The influence of correlation and temperature on the electronic structure of bulk and thin film GdN has been studied using the s-f model, which combines the one electron band structure with a many body procedure. The tight binding linear muffin tin orbital (TB-LMTO) method was used to obtain the one electron band structure of the system. The s-f exchange coupling constants for each band were obtained from the spin polarized band structure of the system using a mean field model. Correlation effects are found to be present in the system. However they are not sufficiently strong to cause a correlation induced splitting in the spectrum. Some bands of the thin films of GdN exhibit splitting at T=T c and it is due to the combined effect of correlation and temperature. The conduction bands of both the bulk and the thin films of GdN exhibit a red shift with respect to temperature. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Suggested Citation

  • S. Bhattacharjee & S. M. Jaya, 2006. "Influence of correlation and temperature on the electronic structure of bulk and thin film GdN," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 49(3), pages 305-311, February.
    • Handle: RePEc:spr:eurphb:v:49:y:2006:i:3:p:305-311
    DOI: 10.1140/epjb/e2006-00069-1
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