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Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems

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  • J. Seebeck
  • T. R. Nielsen
  • P. Gartner
  • F. Jahnke

Abstract

A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Suggested Citation

  • J. Seebeck & T. R. Nielsen & P. Gartner & F. Jahnke, 2006. "Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 49(2), pages 167-170, January.
    • Handle: RePEc:spr:eurphb:v:49:y:2006:i:2:p:167-170
    DOI: 10.1140/epjb/e2006-00048-6
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