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Amorphous to polycrystalline transition in Co $\mathsf{_x}$ Si $\mathsf{_{1-x}}$ alloy thin films

Author

Listed:
  • M. Vélez
  • C. Mény
  • S. Valvidares
  • J. Diaz
  • R. Morales
  • L. Alvarez-Prado
  • P. Panissod
  • J. Alameda

Abstract

The transition from amorphous to polycrystalline microstructure has been studied in sputtered Co x Si 1-x alloy films by structural, magneto-optical and Nuclear Magnetic Resonance measurements. For $x \geq 0.76$ , Si is diluted into Co without significantly altering the polycrystalline microstructure, composed of a mixture of hcp and fcc grains. However, the fraction of Co atoms that contribute to the Nuclear Magnetic Resonance signal is found to decrease steeply (down to about 60 $\%$ at x=0.76) suggesting a microscopic segregation of a Si rich phase that induces a large degree of disorder. This is reflected in a harder magnetic behavior and a strong anisotropy dispersion. Below x=0.75, the transition to an amorphous microstructure results in a sudden increase in the fraction of Co atoms within a ferromagnetic phase, indicating the recovery of the microscopic homogeneity. Also a significant enhancement of the macroscopic magnetic anisotropy is found for amorphous films with compositions right below the transition. Within the amorphous phase a second regime of Si segregation appears characterized by a constant Co local environment and constant magnetic properties. Finally, for x=0.65 there is a significant Si enrichment in the Co environment and the films become non magnetic for compositions below this point. Copyright Springer-Verlag Berlin/Heidelberg 2004

Suggested Citation

  • M. Vélez & C. Mény & S. Valvidares & J. Diaz & R. Morales & L. Alvarez-Prado & P. Panissod & J. Alameda, 2004. "Amorphous to polycrystalline transition in Co $\mathsf{_x}$ Si $\mathsf{_{1-x}}$ alloy thin films," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 41(4), pages 517-524, October.
  • Handle: RePEc:spr:eurphb:v:41:y:2004:i:4:p:517-524
    DOI: 10.1140/epjb/e2004-00345-0
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