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Field-domain dynamics in negative-effective-mass terahertz oscillators

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  • J. Cao
  • H. Liu

Abstract

We have theoretically studied electric-field-domain dynamics and current self-oscillations in dc-biased negative-effective-mass (NEM) p + pp + diodes. The formation and traveling of electric-field domains in the diodes are investigated in detail with a realistic treatment of the scatterings contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon within the balance-equation theory. The interesting patterns of the spatiotemporal electric-field domains are shown as a gray density plot with the applied bias as a controlling parameter. It is found that, the applied bias could largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM p + pp + diode with a submicrometer p-base. The NEM p + pp + diode may therefore be developed as an electrically tunable THz-frequency oscillator. Copyright Springer-Verlag Berlin/Heidelberg 2003

Suggested Citation

  • J. Cao & H. Liu, 2003. "Field-domain dynamics in negative-effective-mass terahertz oscillators," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 36(3), pages 313-316, December.
    • Handle: RePEc:spr:eurphb:v:36:y:2003:i:3:p:313-316
    DOI: 10.1140/epjb/e2003-00349-2
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