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On the dechanneling of protons in Si [110]

Author

Listed:
  • M. Kokkoris
  • G. Perdikakis
  • S. Kossionides
  • S. Petrovic
  • E. Simoen

Abstract

In the present work, the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E p =1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x c , which represent characteristic dechanneling rate and range, respectively, is examined, yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies. Copyright Springer-Verlag Berlin/Heidelberg 2003

Suggested Citation

  • M. Kokkoris & G. Perdikakis & S. Kossionides & S. Petrovic & E. Simoen, 2003. "On the dechanneling of protons in Si [110]," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 34(3), pages 257-263, August.
    • Handle: RePEc:spr:eurphb:v:34:y:2003:i:3:p:257-263
    DOI: 10.1140/epjb/e2003-00219-y
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