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Two-dimensional electron systems in inversion layers of p-type Hg 0.8 Zn 0.2 Te metal-insulator-semiconductor structures

Author

Listed:
  • O. Rousière
  • D. Lemoine
  • H. Folliot
  • S. Hinooda
  • R. Granger

Abstract

Strong oscillations on capacitance and conductance have been observed in p-type Hg 0.8 Zn 0.2 Te metal-insulator-semiconductor structures, made by using a recent process for the interface passivation. This behaviour is attributed to a two-dimensional electron gas in the n-inversion layer and the variation of the conductance maximums with temperature indicates that the dominant perpendicular transport mechanism for electrons is an incoherent two-step tunnelling through deep levels in the gap. Three models have been used to describe the quantum confinement: the simple variational method, the triangular potential approximation and the propagation matrix method. The later approach takes into account the non parabolicity of the conduction band structure and uses a finite height barrier at the insulator-semiconductor interface. A very good agreement between experimental and calculated values for the two lowest subband energy is obtained. Copyright Società Italiana di Fisica, Springer-Verlag 1999

Suggested Citation

  • O. Rousière & D. Lemoine & H. Folliot & S. Hinooda & R. Granger, 1999. "Two-dimensional electron systems in inversion layers of p-type Hg 0.8 Zn 0.2 Te metal-insulator-semiconductor structures," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 11(3), pages 491-496, October.
    • Handle: RePEc:spr:eurphb:v:11:y:1999:i:3:p:491-496:10.1007/bf03219178
    DOI: 10.1007/BF03219178
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