IDEAS home Printed from https://ideas.repec.org/a/spr/eurphb/v11y1999i2p327-34310.1007-s100510050943.html
   My bibliography  Save this article

Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces

Author

Listed:
  • J. Arnault
  • L. Demuynck
  • C. Speisser
  • F. Normand

Abstract

The diamond nucleation has been studied on scratched Si(100) both by surface analyses (XPS, AES, ELS) and microstructural probes (AFM, SEM). Two pathways for diamond formation and growth are detected: A seeding pathway occurs by direct growth from part of diamond seeds left by the mechanical pretreatment. Not all of these seeds however are prone to diamond growth as they can be either dissolved or carburized. A nucleation pathway occurs through a stepwise process including the formation of extrinsic (pretreatment) or intrinsic (in situ) nucleation sites, followed by formation of carbon-based precursors. It is believed that nucleation sites could be either grooves of scratching lines or protrusions produced by etching-redeposition. The size of these protrusions is not larger than 100 nm. On top of these protrusions as well as on the bare substrate, a thin layer of silicon carbide rapidly forms and DLC carbon likely. This complex process on top of protrusions may constitute carbon-based embryos for further diamond nucleation. Copyright Società Italiana di Fisica, Springer-Verlag 1999

Suggested Citation

  • J. Arnault & L. Demuynck & C. Speisser & F. Normand, 1999. "Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 11(2), pages 327-343, September.
    • Handle: RePEc:spr:eurphb:v:11:y:1999:i:2:p:327-343:10.1007/s100510050943
    DOI: 10.1007/s100510050943
    as

    Download full text from publisher

    File URL: http://hdl.handle.net/10.1007/s100510050943
    Download Restriction: Access to full text is restricted to subscribers.
    File URL: https://libkey.io/10.1007/s100510050943?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:spr:eurphb:v:11:y:1999:i:2:p:327-343:10.1007/s100510050943. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.springer.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.