Author
Listed:
- Mar Suarez
- Maria Soledad Beato
Abstract
In the globalized world we live in, it is increasingly common for people to speak more than one language. Although research in psychology has been widely interested in the study of false memories with the Deese/Roediger-McDermott (DRM) paradigm, to date, there is a scarcity of studies comparing false memories in the first and the second language (L1 and L2, respectively). It is noteworthy that one of the most studied variables in the DRM paradigm, the backward associative strength (BAS), has hardly been studied in the L2. Moreover, the only study that recently examined this matter found differences in the knowledge of L2-word meaning between the high-BAS and low-BAS lists, which would hinder the interpretation of the BAS effect in L2 false memories. Taking all this into account, the current work examined false memories in the L1 (Spanish) and the L2 (English) as a function of BAS overcoming the limitations of the previous study. We selected DRM lists using both Spanish and English free association norms and lists were constructed to vary in BAS values while controlling the knowledge of word meaning. Results showed that false recognition was greater in the L1 or dominant language than in the L2 or non-dominant language. Furthermore, BAS modulated the false recognition in both the L1 and the L2. That is, false recognition was higher in high-BAS than low-BAS lists in both languages. Sensitivity index from the signal-detection theory helped us gain further insight into these results. The main findings are discussed in the light of theoretical models from both the false memory and the second language processing literature. Finally, practical implications and future research are provided.
Suggested Citation
Mar Suarez & Maria Soledad Beato, 2023.
"False memory in a second language: The importance of controlling the knowledge of word meaning,"
PLOS ONE, Public Library of Science, vol. 18(5), pages 1-21, May.
Handle:
RePEc:plo:pone00:0285747
DOI: 10.1371/journal.pone.0285747
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