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Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications

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  • Mohammad Soruri
  • S Mohammad Razavi
  • Mehdi Forouzanfar
  • Paolo Colantonio

Abstract

Improvement of power amplifier’s performance is the desired topic in communication systems. There are many efforts are made to provide good input and output matching, high efficiency, sufficient power gain and appropriate output power. This paper presents a power amplifier with optimized input and output matching networks. In the proposed approach, a new structure of the Hidden Markov Model with 20 hidden states is used for modeling the power amplifier. The widths and lengths of the microstrip lines in the input and output matching networks are defined as the parameters that the Hidden Markov Model should optimize. For validating our algorithm, a power amplifier has been realized based on a 10W GaN HEMT with part number CG2H40010F from the Cree corporation. Measurement results have shown a PAE higher than 50%, a Gain of about 14 dB, and input and output return losses lower than -10 dB over the frequency range of 1.8–2.5 GHz. The proposed PA can be used in wireless applications such as radar systems.

Suggested Citation

  • Mohammad Soruri & S Mohammad Razavi & Mehdi Forouzanfar & Paolo Colantonio, 2023. "Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications," PLOS ONE, Public Library of Science, vol. 18(5), pages 1-18, May.
    • Handle: RePEc:plo:pone00:0285186
    DOI: 10.1371/journal.pone.0285186
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