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Graphene nanoribbons grown in hBN stacks for high-performance electronics

Author

Listed:
  • Bosai Lyu

    (Shanghai Jiao Tong University
    Nanjing University)

  • Jiajun Chen

    (Shanghai Jiao Tong University
    Nanjing University)

  • Sen Wang

    (Wuhan University
    Wuhan University)

  • Shuo Lou

    (Shanghai Jiao Tong University
    Nanjing University)

  • Peiyue Shen

    (Shanghai Jiao Tong University
    Nanjing University)

  • Jingxu Xie

    (Shanghai Jiao Tong University
    Nanjing University)

  • Lu Qiu

    (Ulsan National Institute of Science and Technology
    Ulsan National Institute of Science and Technology
    Ulsan National Institute of Science and Technology)

  • Izaac Mitchell

    (Ulsan National Institute of Science and Technology)

  • Can Li

    (Shanghai Jiao Tong University
    Nanjing University)

  • Cheng Hu

    (Shanghai Jiao Tong University
    Nanjing University)

  • Xianliang Zhou

    (Shanghai Jiao Tong University
    Nanjing University)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Xiaoqun Wang

    (Shanghai Jiao Tong University
    Nanjing University
    Shanghai Jiao Tong University)

  • Jinfeng Jia

    (Shanghai Jiao Tong University
    Nanjing University
    Shanghai Jiao Tong University)

  • Qi Liang

    (Shanghai Jiao Tong University
    Nanjing University
    Shanghai Jiao Tong University)

  • Guorui Chen

    (Shanghai Jiao Tong University)

  • Tingxin Li

    (Shanghai Jiao Tong University
    Shanghai Jiao Tong University)

  • Shiyong Wang

    (Shanghai Jiao Tong University
    Nanjing University
    Shanghai Jiao Tong University)

  • Wengen Ouyang

    (Wuhan University
    Wuhan University)

  • Oded Hod

    (Tel Aviv University)

  • Feng Ding

    (Ulsan National Institute of Science and Technology
    Chinese Academy of Sciences)

  • Michael Urbakh

    (Tel Aviv University)

  • Zhiwen Shi

    (Shanghai Jiao Tong University
    Nanjing University
    Shanghai Jiao Tong University)

Abstract

Van der Waals encapsulation of two-dimensional materials in hexagonal boron nitride (hBN) stacks is a promising way to create ultrahigh-performance electronic devices1–4. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination and unscalable. Here we report the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) in hBN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow (

Suggested Citation

  • Bosai Lyu & Jiajun Chen & Sen Wang & Shuo Lou & Peiyue Shen & Jingxu Xie & Lu Qiu & Izaac Mitchell & Can Li & Cheng Hu & Xianliang Zhou & Kenji Watanabe & Takashi Taniguchi & Xiaoqun Wang & Jinfeng Ji, 2024. "Graphene nanoribbons grown in hBN stacks for high-performance electronics," Nature, Nature, vol. 628(8009), pages 758-764, April.
  • Handle: RePEc:nat:nature:v:628:y:2024:i:8009:d:10.1038_s41586-024-07243-0
    DOI: 10.1038/s41586-024-07243-0
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