Author
Listed:
- Junho Seo
(Institute for Basic Science (IBS)
Pohang University of Science and Technology (POSTECH))
- Chandan De
(Institute for Basic Science (IBS)
Pohang Accelerator Laboratory)
- Hyunsoo Ha
(Seoul National University)
- Ji Eun Lee
(Yonsei University)
- Sungyu Park
(Institute for Basic Science (IBS))
- Joonbum Park
(Helmholtz-Zentrum Dresden-Rossendorf)
- Yurii Skourski
(Helmholtz-Zentrum Dresden-Rossendorf)
- Eun Sang Choi
(Florida State University)
- Bongjae Kim
(Kunsan National University)
- Gil Young Cho
(Institute for Basic Science (IBS)
Pohang University of Science and Technology (POSTECH)
Asia Pacific Center for Theoretical Physics)
- Han Woong Yeom
(Institute for Basic Science (IBS)
Pohang University of Science and Technology (POSTECH))
- Sang-Wook Cheong
(Pohang Accelerator Laboratory
Rutgers University)
- Jae Hoon Kim
(Yonsei University)
- Bohm-Jung Yang
(Seoul National University
Institute for Basic Science (IBS)
Seoul National University)
- Kyoo Kim
(Korea Atomic Energy Research Institute (KAERI))
- Jun Sung Kim
(Institute for Basic Science (IBS)
Pohang University of Science and Technology (POSTECH))
Abstract
Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications1,2. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction3–10. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn3Si2Te6, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal–insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities.
Suggested Citation
Junho Seo & Chandan De & Hyunsoo Ha & Ji Eun Lee & Sungyu Park & Joonbum Park & Yurii Skourski & Eun Sang Choi & Bongjae Kim & Gil Young Cho & Han Woong Yeom & Sang-Wook Cheong & Jae Hoon Kim & Bohm-J, 2021.
"Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors,"
Nature, Nature, vol. 599(7886), pages 576-581, November.
Handle:
RePEc:nat:nature:v:599:y:2021:i:7886:d:10.1038_s41586-021-04028-7
DOI: 10.1038/s41586-021-04028-7
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