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Enhanced flexoelectric-like response in oxide semiconductors

Author

Listed:
  • Jackeline Narvaez

    (Institut Catala de Nanociencia i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Nanoscience and Technology (BIST), Campus UAB)

  • Fabian Vasquez-Sancho

    (Institut Catala de Nanociencia i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Nanoscience and Technology (BIST), Campus UAB
    Centro de Investigación en Ciencia e Ingeniería de Materiales, Universidad de Costa Rica)

  • Gustau Catalan

    (Institut Catala de Nanociencia i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Nanoscience and Technology (BIST), Campus UAB
    ICREA—Institucio Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23)

Abstract

Semiconducting single crystals of doped barium titanate and titanium dioxide exhibit a flexoelectric-like response upon bending that is much larger than in their undoped, insulating counterparts, reaching unprecedentedly large effective flexoelectric coefficients.

Suggested Citation

  • Jackeline Narvaez & Fabian Vasquez-Sancho & Gustau Catalan, 2016. "Enhanced flexoelectric-like response in oxide semiconductors," Nature, Nature, vol. 538(7624), pages 219-221, October.
    • Handle: RePEc:nat:nature:v:538:y:2016:i:7624:d:10.1038_nature19761
    DOI: 10.1038/nature19761
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    Cited by:

    1. Yuanzhe Li & Xiang Huang & Junyu Tao & Jijie Huang & Weiming Xiong & Weijin Chen & Yue Zheng, 2022. "Effect of Pre-Polarization Process on the Apparent Piezoelectric Response Measured by Point-Ring Method in Ferroelectric Perovskite Oxide Ceramics," Energies, MDPI, vol. 15(10), pages 1-11, May.

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